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STLC5465B Datasheet(PDF) 49 Page - STMicroelectronics |
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STLC5465B Datasheet(HTML) 49 Page - STMicroelectronics |
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49 / 101 page ![]() V1 - MEMORY TIMING T Total Re ad Cycle Tu HZ HZ HZ HZ E ach s ignal from the MHDLC is high impe dance outside this time if MBL = 0 a a a 1/f NDS fr o m µP (or e quivalent) MASTERCLOCK a pplied to XTAL1 P in ADM0/10 NWE NOE DM0/15 from DRAM Circuit Note : Se e MBL De finition a a a NRAS 0/3 Tv NCAS 0/1 Tw Tz Tv/2 Ts Tw + Tz /2 Th Figure 38 : Dynamic Memory Read Signals from the Multi-HDLC VI.1 - Dynamic Memories Symbol Parameter Min. Typ. Max. Unit T Delay between Data Strobe from the mP and beginning of cycle 2/f a Delay between Masterclock and Edge of each signal delivered by the MHDLC (30pF) V DD =5V V DD = 3.3V 20 30 40 ns ns Tw Delay between NCAS Falling Edge and NCAS rising Edge 1/f 2/f ns Tz Delay between NCAS Rising Edge and end of cycle 1/f 2/f ns Ts Set-up Time Data /NCAS Rising Edge 20 ns Th Hold Time Data/NCAS Rising Edge 0 ns STLC5465B 49/101 |
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