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S25FL256SDPNFAQ Datasheet(PDF) 116 Page - Cypress Semiconductor |
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S25FL256SDPNFAQ Datasheet(HTML) 116 Page - Cypress Semiconductor |
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116 / 149 page ![]() Document Number: 001-98283 Rev. *M Page 115 of 148 S25FL128S/S25FL256S 9.8.6 PPB Program (PPBP E3h) Before the PPB Program (PPBP) command can be accepted by the device, a Write Enable (WREN) command must be issued. After the Write Enable (WREN) command has been decoded, the device will set the Write Enable Latch (WEL) in the Status Register to enable any write operations. The PPBP command is entered by driving CS# to the logic low state, followed by the instruction, followed by the 32-bit address selecting location zero within the desired sector (note, the high order address bits not used by a particular density device must be zero). The PPBP command affects the P_ERR and WIP bits of the Status and Configuration Registers in the same manner as any other programming operation. CS# must be driven to the logic high state after the last bit of address has been latched in. If not, the PPBP command is not executed. As soon as CS# is driven to the logic high state, the self-timed PPBP operation is initiated. While the PPBP operation is in progress, the Status Register may be read to check the value of the Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit is a 1 during the self-timed PPBP operation, and is a 0 when it is completed. When the PPBP operation is completed, the Write Enable Latch (WEL) is set to a 0. Figure 81. PPBP Command Sequence 9.8.7 PPB Erase (PPBE E4h) The PPB Erase (PPBE) command sets all PPB bits to 1. Before the PPB Erase command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations. The instruction E4h is shifted into SI by the rising edges of the SCK signal. CS# must be driven into the logic high state after the eighth bit of the instruction byte has been latched in on SI. This will initiate the beginning of internal erase cycle, which involves the pre-programming and erase of the entire PPB memory array. Without CS# being driven to the logic high state after the eighth bit of the instruction, the PPB erase operation will not be executed. With the internal erase cycle in progress, the user can read the value of the Write-In Progress (WIP) bit to check if the operation has been completed. The WIP bit will indicate a 1 when the erase cycle is in progress and a 0 when the erase cycle has been completed. Erase suspend is not allowed during PPB Erase. Figure 82. PPB Erase Command Sequence IInstruction 32 bit Address 1 3 2 10 9 8 7 6 5 4 0 38 37 36 39 0 1 31 30 29 3 2 SCK SI SO MSB High Impedance CS 0 1 7 6 5 4 3 2 MSB 35 # 1 3 27 6 5 4 0 Instruction SCK SO High Impedance SI CS# 0 1 7 6 5 4 3 2 MSB |
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