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S25FL256SDPNFAQ Datasheet(PDF) 116 Page - Cypress Semiconductor

No. de pieza S25FL256SDPNFAQ
Descripción Electrónicos  128 Mbit (16 Mbyte)/256 Mbit (32 Mbyte) 128 Mbit (16 Mbyte)/256 Mbit (32 Mbyte)
PDF  149 Pages
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Fabricante Electrónico  CYPRESS [Cypress Semiconductor]
Página de inicio  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

S25FL256SDPNFAQ Datasheet(HTML) 116 Page - Cypress Semiconductor

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Document Number: 001-98283 Rev. *M
Page 115 of 148
S25FL128S/S25FL256S
9.8.6
PPB Program (PPBP E3h)
Before the PPB Program (PPBP) command can be accepted by the device, a Write Enable (WREN) command must be issued. After
the Write Enable (WREN) command has been decoded, the device will set the Write Enable Latch (WEL) in the Status Register to
enable any write operations.
The PPBP command is entered by driving CS# to the logic low state, followed by the instruction, followed by the 32-bit address
selecting location zero within the desired sector (note, the high order address bits not used by a particular density device must be
zero).
The PPBP command affects the P_ERR and WIP bits of the Status and Configuration Registers in the same manner as any other
programming operation.
CS# must be driven to the logic high state after the last bit of address has been latched in. If not, the PPBP command is not
executed. As soon as CS# is driven to the logic high state, the self-timed PPBP operation is initiated. While the PPBP operation is in
progress, the Status Register may be read to check the value of the Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit is a
1 during the self-timed PPBP operation, and is a 0 when it is completed. When the PPBP operation is completed, the Write Enable
Latch (WEL) is set to a 0.
Figure 81. PPBP Command Sequence
9.8.7
PPB Erase (PPBE E4h)
The PPB Erase (PPBE) command sets all PPB bits to 1. Before the PPB Erase command can be accepted by the device, a Write
Enable (WREN) command must be issued and decoded by the device, which sets the Write Enable Latch (WEL) in the Status
Register to enable any write operations.
The instruction E4h is shifted into SI by the rising edges of the SCK signal.
CS# must be driven into the logic high state after the eighth bit of the instruction byte has been latched in on SI. This will initiate the
beginning of internal erase cycle, which involves the pre-programming and erase of the entire PPB memory array. Without CS#
being driven to the logic high state after the eighth bit of the instruction, the PPB erase operation will not be executed.
With the internal erase cycle in progress, the user can read the value of the Write-In Progress (WIP) bit to check if the operation has
been completed. The WIP bit will indicate a 1 when the erase cycle is in progress and a 0 when the erase cycle has been completed.
Erase suspend is not allowed during PPB Erase.
Figure 82. PPB Erase Command Sequence
IInstruction
32 bit Address
1
3
2
10
9
8
7
6
5
4
0
38
37
36
39
0
1
31
30
29
3
2
SCK
SI
SO
MSB
High Impedance
CS
0
1
7
6
5
4
3
2
MSB
35
#
1
3
27
6
5
4
0
Instruction
SCK
SO
High Impedance
SI
CS#
0
1
7
6
5
4
3
2
MSB



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