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S25FL256SDPNFAQ Datasheet(PDF) 126 Page - Cypress Semiconductor

No. de pieza S25FL256SDPNFAQ
Descripción Electrónicos  128 Mbit (16 Mbyte)/256 Mbit (32 Mbyte) 128 Mbit (16 Mbyte)/256 Mbit (32 Mbyte)
PDF  149 Pages
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Fabricante Electrónico  CYPRESS [Cypress Semiconductor]
Página de inicio  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

S25FL256SDPNFAQ Datasheet(HTML) 126 Page - Cypress Semiconductor

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Document Number: 001-98283 Rev. *M
Page 125 of 148
S25FL128S/S25FL256S
Note:
1. FL-S 128 Mbit and 256-Mbit devices have either a hybrid sector architecture with thirty two 4-kB sectors and all remaining sectors of 64-kB or with uniform 256-kB
sectors. Devices with the hybrid sector architecture are initially shipped from Cypress with the 4 kB sectors located at the bottom of the array address map. However,
the device configuration TBPARM bit CR1[2] may be programed to invert the sector map to place the 4-kB sectors at the top of the array address map. The CFI
geometry information of the above table is relevant only to the initial delivery state of a hybrid sector device. The flash device driver software must examine the
TBPARM bit to determine if the sector map was inverted at a later time.
Table 56. CFI System Interface String
Byte Address
Data
Description
1Bh
27h
VCC Min. (erase/program): 100 millivolts
1Ch
36h
VCC Max. (erase/program): 100 millivolts
1Dh
00h
VPP Min. voltage (00h = no VPP present)
1Eh
00h
VPP Max. voltage (00h = no VPP present)
1Fh
06h
Typical timeout per single byte program 2N µs
20h
08h (256B page)
09h (512B page)
Typical timeout for Min. size Page program 2N µs
(00h = not supported)
21h
08h (4 kB or 64 kB)
09h (256 kB)
Typical timeout per individual sector erase 2N ms
22h
0Fh (128 Mb)
10h (256 Mb)
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
02h
Max. timeout for byte program 2N times typical
24h
02h
Max. timeout for page program 2N times typical
25h
03h
Max. timeout per individual sector erase 2N times typical
26h
03h
Max. timeout for full chip erase 2N times typical
(00h = not supported)
Table 57. Device Geometry Definition for 128-Mbit and 256-Mbit Bottom Boot Initial Delivery State
Byte Address
Data
Description
27h
18h (128 Mb)
19h (256 Mb)
Device Size = 2N bytes
28h
02h
Flash Device Interface Description:
0000h = x8 only
0001h = x16 only
0002h = x8/x16 capable
0003h = x32 only
0004h = Single I/O SPI, 3-byte address
0005h = Multi I/O SPI, 3-byte address
0102h = Multi I/O SPI, 3- or 4-byte address
29h
01h
2Ah
08h
Max. number of bytes in multi-byte write = 2N
(0000 = not supported
0008h = 256B page
0009h = 512B page)
2Bh
00h
2Ch
02h
Number of Erase Block Regions within device
1 = Uniform Device, 2 = Boot Device
2Dh
1Fh
Erase Block Region 1 Information (refer to JEDEC JEP137):
32 sectors = 32-1 = 001Fh
4-kB sectors = 256 bytes x 0010h
2Eh
00h
2Fh
10h
30h
00h
31h
FDh
Erase Block Region 2 Information:
254 sectors = 254-1 = 00FDh (128 Mb)
510 sectors = 510-1 = 01FDh (256 Mb)
64-kB sectors = 0100h x 256 bytes
32h
00h (128 Mb)
01h (256 Mb)
33h
00h
34h
01h
35h thru 3Fh
FFh
RFU



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