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S25FL256SDPNFAQ Datasheet(PDF) 126 Page - Cypress Semiconductor |
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S25FL256SDPNFAQ Datasheet(HTML) 126 Page - Cypress Semiconductor |
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126 / 149 page ![]() Document Number: 001-98283 Rev. *M Page 125 of 148 S25FL128S/S25FL256S Note: 1. FL-S 128 Mbit and 256-Mbit devices have either a hybrid sector architecture with thirty two 4-kB sectors and all remaining sectors of 64-kB or with uniform 256-kB sectors. Devices with the hybrid sector architecture are initially shipped from Cypress with the 4 kB sectors located at the bottom of the array address map. However, the device configuration TBPARM bit CR1[2] may be programed to invert the sector map to place the 4-kB sectors at the top of the array address map. The CFI geometry information of the above table is relevant only to the initial delivery state of a hybrid sector device. The flash device driver software must examine the TBPARM bit to determine if the sector map was inverted at a later time. Table 56. CFI System Interface String Byte Address Data Description 1Bh 27h VCC Min. (erase/program): 100 millivolts 1Ch 36h VCC Max. (erase/program): 100 millivolts 1Dh 00h VPP Min. voltage (00h = no VPP present) 1Eh 00h VPP Max. voltage (00h = no VPP present) 1Fh 06h Typical timeout per single byte program 2N µs 20h 08h (256B page) 09h (512B page) Typical timeout for Min. size Page program 2N µs (00h = not supported) 21h 08h (4 kB or 64 kB) 09h (256 kB) Typical timeout per individual sector erase 2N ms 22h 0Fh (128 Mb) 10h (256 Mb) Typical timeout for full chip erase 2N ms (00h = not supported) 23h 02h Max. timeout for byte program 2N times typical 24h 02h Max. timeout for page program 2N times typical 25h 03h Max. timeout per individual sector erase 2N times typical 26h 03h Max. timeout for full chip erase 2N times typical (00h = not supported) Table 57. Device Geometry Definition for 128-Mbit and 256-Mbit Bottom Boot Initial Delivery State Byte Address Data Description 27h 18h (128 Mb) 19h (256 Mb) Device Size = 2N bytes 28h 02h Flash Device Interface Description: 0000h = x8 only 0001h = x16 only 0002h = x8/x16 capable 0003h = x32 only 0004h = Single I/O SPI, 3-byte address 0005h = Multi I/O SPI, 3-byte address 0102h = Multi I/O SPI, 3- or 4-byte address 29h 01h 2Ah 08h Max. number of bytes in multi-byte write = 2N (0000 = not supported 0008h = 256B page 0009h = 512B page) 2Bh 00h 2Ch 02h Number of Erase Block Regions within device 1 = Uniform Device, 2 = Boot Device 2Dh 1Fh Erase Block Region 1 Information (refer to JEDEC JEP137): 32 sectors = 32-1 = 001Fh 4-kB sectors = 256 bytes x 0010h 2Eh 00h 2Fh 10h 30h 00h 31h FDh Erase Block Region 2 Information: 254 sectors = 254-1 = 00FDh (128 Mb) 510 sectors = 510-1 = 01FDh (256 Mb) 64-kB sectors = 0100h x 256 bytes 32h 00h (128 Mb) 01h (256 Mb) 33h 00h 34h 01h 35h thru 3Fh FFh RFU |
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