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STLC5466 Datasheet(PDF) 23 Page - STMicroelectronics |
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STLC5466 Datasheet(HTML) 23 Page - STMicroelectronics |
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23 / 130 page ![]() 23/130 STLC5466 III.6.2.2 - Read Fetch Memory When the microprocessor delivers the address word named An to read data named [An] out of the shared memory in fact it reads data [An] from the Read Fetch Memory (64 words). The number of wait cycle for the microprocessor is strongly reduced. If An, address word delivered by the microprocessor, and data [An] are already in the Read Fetch Memory and validated then there is no wait time for the microprocessor. The source of [An] is truly the shared memory whatever An. Data [An] if validated in Fetch Memory and Data [An] in shared memory are always the same. III.6.2.3 - Definition of the Interface for the dif- ferent microprocessors The signals connected to the microprocessor in- terface are presented on the following figures for the different microprocessor (see Figures). III.7 - Memory Interface III.7.1 - Function Description The memory interface allows the connection of Synchronous Dynamic RAM. The memory inter- face will address up to 16 Megabytes. The memo- ry location is always organized in 16 bits. The memory is shared between the Multi-HDLC and the microprocessor. The access to the mem- ory is arbitrated by an internal function of the cir- cuit: the bus arbitration. III.7.2 - Choice of memory versus microproces- sor and capacity required The memory interface depends on the memory chips which are connected. The memory chips will be chosen versus their organization. Example1: if the application requires 8 or 16 bit µProcessor and 1 Megaword Shared memory size, one capability is offered: – 1 SDRAM Circuit (1Mx16). Example2: if the application requires 16 bit µProc- essor and 4 Megaword Shared memory size, three capabilities are offered: – 4 SDRAM Circuits (1Mx16) or – 4 SDRAM Circuits (4Mx4) or – 1 SDRAM Circuit (4Mx16). .Example3: if the application requires 8 Megaword Shared memory size three capabilities are offered: – 8 SDRAM Circuits (4Mx4) or – 2 SDRAM Circuits (4Mx16) or – 2 SDRAM Circuit (8Mx8). III.7.3 - Memory Cycle Some parameters are frozen: – Burst Read and Single Write. – The Burst Length is 4. – The burst data is addressed in sequential mode. The programmable parameters are: – Latency Mode – selected circuit organisation – the exchanges between Multi-HDLC and SDRAM are at the Master Clock frequency (33MHz, 50MHz, 66MHz) III.7.4 - Memories composed of different cir- cuits III.7.4.1 - Memory obtained with 1M x16 SDRAM circuit The Address bits delivered by the Multi-HDLC for 1M x 16 SDRAM circuits are: – ADM11 for Bank select corresponding with A20 delivered by the microprocessor – ADM0/10 for Row address inputs corresponding with A9/19 delivered by the microprocessor – ADM0/7 for Column address inputs correspond- ing with A1/8 delivered by the microprocessor III.7.4.2 - Memory obtained with 2M x 8 SDRAM circuit The Address bits delivered by the Multi-HDLC for 2M x 8 SDRAM circuits are: – ADM11 for Bank select corresponding with A21 delivered by the microprocessor – ADM0/10 for Row address inputs corresponding with A10/20 delivered by the microprocessor – ADM0/8 for Column address inputs correspond- ing with A1/9 delivered by the microprocessor Signals A22 A21 Signals A0 or equiva- lent NCE3 1 1 NCE2 1 0 NCE1 0 1 UDQM 1 NCE0 0 0 LDQM 0 Signals A0 or equivalent NLDS NUDS UDQM 1 0 1 LDQM 0 1 0 |
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